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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer

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Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered

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A) The self-compliance and enhanced endurance characteristics of

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The endurance (switching cycles) of the ZrO2 stack RRAM for (a) dc

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Picosecond multilevel resistive switching in tantalum oxide thin