Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer
The schematic of 3D vertical RRAM array (VRRAM_2). The memory cell
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered
Point Contact Resistive Switching Memory Based On, 44% OFF
A) The self-compliance and enhanced endurance characteristics of
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The endurance (switching cycles) of the ZrO2 stack RRAM for (a) dc
a) Schematic of RESET analysis by dynamic conductance of the I–V
Picosecond multilevel resistive switching in tantalum oxide thin